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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * * Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25C Derate above 25C 3.5 20 Watts mW/ C MSC1314.PDF 10-25-99 MRF544 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 70 100 3.0 Value Typ. 1.0 Max. 20 100 Unit Vdc Vdc Vdc A A (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - DYNAMIC Symbol Test Conditions Min. COB CIB fT Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) 1000 Value Typ. 2.5 6.1 1500 Max. Unit pF pF MHz MSC1314.PDF 10-25-99 MRF544 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz Value Typ. 13.5 13.5 12.7 Max. Unit dB dB dB G U max 11.7 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.221 0.219 0.250 0.329 0.338 0.348 0.371 0.374 0.402 0.438 -143 -108 -72 -34 9 51 94 140 -170 -126 S21 |S21| 8.54 4.36 2.98 2.39 2.11 1.83 1.61 1.44 1.45 1.56 97 87 79 72 70 65 61 59 63 64 S12 |S12| 0.047 0.091 0.141 0.178 0.237 0.292 0.35 0.383 0.428 0.503 82 87 87 84 87 86 86 85 88 86 S22 |S22| 0.508 0.413 0.406 0.445 0.409 0.412 0.411 0.413 0.386 0.405 14 49 82 108 140 176 -147 -112 -78 -42 MSC1314.PDF 10-25-99 MRF544 MSC1314.PDF 10-25-99 |
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